SIS178LDN-T1-GE3
Part NoSIS178LDN-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 70 V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)70 V
Current-ContinuousDrain(Id)@25°C13.9A (Ta), 45.3A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)9.5mOhm @ 10A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs28.5 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1135 pF @ 35 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.6W (Ta), 39W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3016
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0413 | |
| 10 | 1.0205 | |
| 100 | 0.9892 | |
| 1000 | 0.958 | |
| 10000 | 0.9163 |
Associated Product
