SISS27DN-T1-GE3
Part NoSISS27DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 30V 50A PPAK 1212-8S
Datasheet
Download Now!
ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C50A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)5.6mOhm @ 15A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs140 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)5250 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature4.8W (Ta), 57W (Tc)
PowerDissipation(Max)-50°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® 1212-8S
GateCharge(Qg)(Max)@VgsPowerPAK® 1212-8S
Grade
Qualification
In Stock:
15085
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6723 | |
| 10 | 0.6589 | |
| 100 | 0.6387 | |
| 1000 | 0.6185 | |
| 10000 | 0.5916 |
Associated Product
