SISS32DN-T1-GE3
Part NoSISS32DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 80V 17.4A/63A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)80 V
Current-ContinuousDrain(Id)@25°C17.4A (Ta), 63A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)7.2mOhm @ 10A, 10V
RdsOn(Max)@Id3.8V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id1930 pF @ 40 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds5W (Ta), 65.7W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® 1212-8S
MountingTypePowerPAK® 1212-8S
SupplierDevicePackage42 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
14534
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1875 | |
| 10 | 1.1638 | |
| 100 | 1.1281 | |
| 1000 | 1.0925 | |
| 10000 | 1.045 |
Associated Product
