SISS76LDN-T1-GE3
Part NoSISS76LDN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 70V 19.6A/67.4A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)70 V
Current-ContinuousDrain(Id)@25°C19.6A (Ta), 67.4A (Tc)
DriveVoltage(MaxRdsOn3.3V, 4.5V
MinRdsOn)6.25mOhm @ 10A, 4.5V
RdsOn(Max)@Id1.6V @ 250µA
Vgs33.5 nC @ 4.5 V
Vgs(th)(Max)@Id±12V
Vgs(Max)2780 pF @ 35 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature4.8W (Ta), 57W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8SH
SupplierDevicePackagePowerPAK® 1212-8SH
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4491
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3952 | |
| 10 | 1.3673 | |
| 100 | 1.3254 | |
| 1000 | 1.2836 | |
| 10000 | 1.2278 |
Associated Product
