SISS98DN-T1-GE3
Part NoSISS98DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 200V 14.1A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesThunderFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C14.1A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)105mOhm @ 7A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs14 nC @ 7.5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)608 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature57W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
10380
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9682 | |
| 10 | 0.9488 | |
| 100 | 0.9198 | |
| 1000 | 0.8907 | |
| 10000 | 0.852 |
Associated Product
