SQJ401EP-T2_GE3

SQJ401EP-T2_GE3

Part NoSQJ401EP-T2_GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 12V 32A PPAK SO-8
Datasheet Download Now!
ECAD Module SQJ401EP-T2_GE3
Get Quotation Now!
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)12 V
Current-ContinuousDrain(Id)@25°C32A (Tc)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)6mOhm @ 15A, 4.5V
RdsOn(Max)@Id1.5V @ 250µA
Vgs164 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)10015 pF @ 6 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature83W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock: 4669
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 0.8277
10 0.8111
100 0.7863
1000 0.7615
10000 0.7284
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
STL13NM60N
STL13NM60N
STMicroelectronics
MOSFET N-CH 600V 10A PWRFLAT HV
STF25N10F7
STF25N10F7
STMicroelectronics
MOSFET N-CH 100V 19A TO220FP
IXTA26P20P
IXTA26P20P
IXYS
MOSFET P-CH 200V 26A TO263
2SJ529L06-E
2SJ529L06-E
Renesas
2SJ529L06 - P-CHANNEL POWER MOSF
PXLS63433AESR2
PXLS63433AESR2
NXP USA Inc.
PSI5 PROTOCOL 2 AXIS HIGH/HIGH
2SK536-TB-E
2SK536-TB-E
Sanyo
N-CHANNEL ENHANCEMENT MOS SILICO