NXPSC10650X6Q
Part NoNXPSC10650X6Q
ManufacturerWeEn Semiconductors
DescriptionDIODE SIL CARB 650V 10A TO220F
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusObsolete
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
Current-AverageRectified(Io)10A
Voltage-Forward(Vf)(Max)@If1.7 V @ 10 A
SpeedNo Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr)0 ns
Current-ReverseLeakage@Vr250 µA @ 650 V
Capacitance@Vr300pF @ 1V, 1MHz
FThrough Hole
MountingTypeTO-220-2 Full Pack, Isolated Tab
Package/CaseTO-220F
SupplierDevicePackage175°C (Max)
OperatingTemperature-Junction-
Grade-
Qualification
In Stock:
4199
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 7.0091 | |
| 10 | 6.8689 | |
| 100 | 6.6586 | |
| 1000 | 6.4484 | |
| 10000 | 6.168 |
Associated Product
