XP10NA011J
Part NoXP10NA011J
ManufacturerYAGEO XSEMI
DescriptionMOSFET N-CH 100V 48.5A TO251S
Datasheet
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ECAD Module
Specification
PackageTube
SeriesXS10NA011
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C48.5A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)11mOhm @ 30A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs56 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2288 pF @ 80 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.13W (Ta), 50W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-251S
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
13085
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.4691 | |
| 10 | 3.3997 | |
| 100 | 3.2956 | |
| 1000 | 3.1916 | |
| 10000 | 3.0528 |
Associated Product
