IPB03N03LAG
Part NoIPB03N03LAG
ManufacturerINFINEON
DescriptionPower Field-Effect Transistor, 80A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time7.5 ns
Lead FreeLead Free
Rise Time8.5 ns
Rds On Max2.7 mΩ
Case/PackageTO-263-3
Current Rating80 A
Input Capacitance7.027 nF
Power Dissipation150 W
Turn-Off Delay Time45 ns
Voltage Rating (DC)25 V
Element ConfigurationSingle
Max Power Dissipation150 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)80 A
Drain to Source Voltage (Vdss)25 V
Drain to Source Breakdown Voltage25 V
In Stock:
14794
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.88 | |
| 10 | 0.8624 | |
| 100 | 0.836 | |
| 1000 | 0.8096 | |
| 10000 | 0.7744 |
Associated Product
