IPD49CN10NG
Part NoIPD49CN10NG
ManufacturerINFINEON
DescriptionPower Field-Effect Transistor, 20A I(D), 100V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC PACKAGE-3
Datasheet
Download Now!
ECAD Module
Specification
Lead Free Status / RoHS StatusLead free / RoHS Compliant
In Stock:
18204
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.1092 | |
| 10 | 0.107 | |
| 100 | 0.1037 | |
| 1000 | 0.1005 | |
| 10000 | 0.0961 |
Associated Product
BSP77E6433HUMA1
Infineon
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. | Summary of Features: Logic Level Input
Infineon
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. | Summary of Features: Logic Level Input
