IPG20N10S4L22ATMA1

IPG20N10S4L22ATMA1

Part NoIPG20N10S4L22ATMA1
ManufacturerInfineon
DescriptionMOSFET 2N-CH 8TDSON
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ECAD Module IPG20N10S4L22ATMA1
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Specification
RoHSCompliant
MountSurface Mount
Height1 mm
Fall Time18 ns
Lead FreeContains Lead
PackagingTape & Reel
Rise Time3 ns
Rds On Max22 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Halogen FreeHalogen Free
Number of Pins8
Lifecycle StatusProduction (Last Updated: 2 years ago)
Package Quantity5000
Input Capacitance1.755 nF
Power Dissipation60 W
Number of Channels2
Number of Elements2
Turn-On Delay Time5 ns
On-State Resistance22 mΩ
Turn-Off Delay Time30 ns
Max Power Dissipation60 W
Max Dual Supply Voltage100 V
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance20 mΩ
Gate to Source Voltage (Vgs)16 V
Continuous Drain Current (ID)20 A
Max Junction Temperature (Tj)175 °C
Drain to Source Voltage (Vdss)100 V
Drain to Source Breakdown Voltage100 V
In Stock: 17541
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 1.548
10 1.517
100 1.4706
1000 1.4242
10000 1.3622
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product