IPI16CN10NG
Part NoIPI16CN10NG
ManufacturerINFINEON
DescriptionPower Field-Effect Transistor, 53A I(D), 100V, 0.0162ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountThrough Hole
Fall Time7 ns
Rise Time14 ns
Rds On Max16.2 mΩ
Case/PackageTO-262
Number of Pins3
Input Capacitance3.22 nF
Power Dissipation100 W
Number of Elements1
Turn-Off Delay Time27 ns
Element ConfigurationSingle
Max Power Dissipation100 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance16.2 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)53 A
Drain to Source Voltage (Vdss)100 V
Drain to Source Breakdown Voltage100 V
In Stock:
14554
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get latest price! | - |
| 10 | Get latest price! | - |
| 100 | Get latest price! | - |
| 1000 | Get latest price! | - |
| 10000 | Get latest price! | - |
Associated Product
