IRLR8256TRPBF
Part NoIRLR8256TRPBF
ManufacturerInfineon
Description-
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width6.22 mm
Height2.3876 mm
Length6.7056 mm
Fall Time8.5 ns
Lead FreeLead Free
PackagingTape & Reel
Rise Time46 ns
REACH SVHCNo SVHC
Rds On Max5.7 mΩ
Resistance5.7 MΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Nominal Vgs1.8 V
TerminationSMD/SMT
Case/PackageDPAK
Recovery Time29 ns
Number of Pins3
Contact PlatingTin
Lifecycle StatusObsolete (Last Updated: 2 years ago)
Package Quantity2000
Input Capacitance1.47 nF
Power Dissipation63 W
Threshold Voltage1.8 V
Turn-On Delay Time9.7 ns
Dual Supply Voltage25 V
On-State Resistance5.7 mΩ
Radiation HardeningNo
Turn-Off Delay Time12 ns
Element ConfigurationSingle
Max Power Dissipation63 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance8.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)81 A
Max Junction Temperature (Tj)175 °C
Drain to Source Voltage (Vdss)25 V
Drain to Source Breakdown Voltage25 V
In Stock:
23333
available for immediate sale in a store
available for immediate sale in a store
Pricing
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Associated Product
PSMNR90-30BL
Nexperia
Power Field-Effect Transistor, 120A I(D), 30V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Nexperia
Power Field-Effect Transistor, 120A I(D), 30V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
