SPI15N60CFD
Part NoSPI15N60CFD
ManufacturerINFINEON
DescriptionPower Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Datasheet
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ECAD Module
Specification
RoHSCompliant
Fall Time5 ns
Lead FreeLead Free
Rise Time24 ns
REACH SVHCNo SVHC
Rds On Max330 mΩ
Nominal Vgs4 V
TerminationThrough Hole
Case/PackageTO-262-3
Number of Pins3
Input Capacitance1.82 nF
Power Dissipation156 W
Threshold Voltage4 V
Number of Elements1
Turn-On Delay Time43 ns
Dual Supply Voltage650 V
Radiation HardeningNo
Turn-Off Delay Time47 ns
Element ConfigurationSingle
Max Power Dissipation156 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance330 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)13.4 A
Drain to Source Voltage (Vdss)650 V
Drain to Source Breakdown Voltage600 V
In Stock:
9435
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.56 | |
| 10 | 1.5288 | |
| 100 | 1.482 | |
| 1000 | 1.4352 | |
| 10000 | 1.3728 |
Associated Product
