FDS2170N3
Part NoFDS2170N3
Manufactureronsemi
DescriptionMOSFET N-CH 200V 3A 8SOIC
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT)
SeriesPowerTrench®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C3A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)128mOhm @ 3A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs36 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1292 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SO FLMP
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width) Exposed Pad
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
18229
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.1114 | |
| 10 | 2.0692 | |
| 100 | 2.0058 | |
| 1000 | 1.9425 | |
| 10000 | 1.858 |
Associated Product
