FQB4N80TM

Part NoFQB4N80TM

Manufactureronsemi

DescriptionMOSFET N-CH 800V 3.9A D2PAK

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ECAD Module

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Specification

PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®

SeriesQFET®

ProductStatusActive

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)800 V

Current-ContinuousDrain(Id)@25°C3.9A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)3.6Ohm @ 1.95A, 10V

RdsOn(Max)@Id5V @ 250µA

Vgs25 nC @ 10 V

Vgs(th)(Max)@Id±30V

Vgs(Max)880 pF @ 25 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature3.13W (Ta), 130W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureSurface Mount

MountingTypeTO-263 (D2PAK)

SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

In Stock: 15170
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