FQD2N100TM

Part NoFQD2N100TM

Manufactureronsemi

DescriptionMOSFET N-CH 1000V 1.6A DPAK

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Specification

PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®

SeriesQFET®

ProductStatusActive

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)1000 V

Current-ContinuousDrain(Id)@25°C1.6A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)9Ohm @ 800mA, 10V

RdsOn(Max)@Id5V @ 250µA

Vgs15.5 nC @ 10 V

Vgs(th)(Max)@Id±30V

Vgs(Max)520 pF @ 25 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature2.5W (Ta), 50W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureSurface Mount

MountingTypeTO-252AA

SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

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