FQI1P50TU

Part NoFQI1P50TU

Manufactureronsemi

DescriptionMOSFET P-CH 500V 1.5A I2PAK

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ECAD Module

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Specification

PackageTube

SeriesQFET®

ProductStatusObsolete

FETTypeP-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)500 V

Current-ContinuousDrain(Id)@25°C1.5A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)10.5Ohm @ 750mA, 10V

RdsOn(Max)@Id5V @ 250µA

Vgs14 nC @ 10 V

Vgs(th)(Max)@Id±30V

Vgs(Max)350 pF @ 25 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature3.13W (Ta), 63W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureThrough Hole

MountingTypeTO-262 (I2PAK)

SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

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