FQP19N20-T
Part NoFQP19N20-T
Manufactureronsemi
DescriptionMOSFET N-CH 200V 28A TO220-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesQFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C19.4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)150mOhm @ 9.7A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs40 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1600 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature140W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4035
available for immediate sale in a store
available for immediate sale in a store
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Associated Product
