FQT1N80TF-WS
Part NoFQT1N80TF-WS
Manufactureronsemi
DescriptionMOSFET N-CH 800V 200MA SOT223-3
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesQFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C200mA (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)20Ohm @ 100mA, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs7.2 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)195 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.1W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-223-3
SupplierDevicePackageTO-261-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
13906
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8827 | |
| 10 | 0.865 | |
| 100 | 0.8386 | |
| 1000 | 0.8121 | |
| 10000 | 0.7768 |
Associated Product
