H3475

H3475

Part NoH3475
Manufactureronsemi
Description-
Datasheet Download Now!
ECAD Module H3475
Get Quotation Now!
Specification
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)1.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)135mu03a9@10V,0.9A
Power Dissipation (Pd)800mW
Gate Threshold Voltage (Vgs(th)@Id)2.6V@1mA
Reverse Transfer Capacitance (Crss@Vds)11pF@10V
TypeNu6c9fu9053
Input Capacitance (Ciss@Vds)88pF@10V
Total Gate Charge (Qg@Vgs)2nC@10V
Operating Temperature+150u2103@(Tj)
In Stock: 6387
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1Get latest price!-
10Get latest price!-
100Get latest price!-
1000Get latest price!-
10000Get latest price!-
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
CSD17382F4
CSD17382F4
Texas Instruments
MOSFET N-CH 30V 2.3A 3PICOSTAR
APT20M20JLL
APT20M20JLL
Microchip Technology
MOSFET N-CH 200V 104A ISOTOP
RSS130N03HZGTB
RSS130N03HZGTB
Rohm Semiconductor
NCH 30V 13A AUTOMOTIVE POWER MOS
IXFH24N80P
IXFH24N80P
IXYS
MOSFET N-CH 800V 24A TO247AD
MRF7S19210HSR5
MRF7S19210HSR5
NXP USA Inc.
RF MOSFET LDMOS 28V NI780
MMA6263Q
MMA6263Q
NXP USA Inc.
ACCELEROMETER 1.5G ANALOG 16QFN