Specification
Collector-Emitter Breakdown Voltage (Vceo)40V
Power Dissipation (Pd)350mW
Collector Current (Ic)600mA
DC Current Gain (hFE@Ic,Vce)100@150mA,10V
Transition Frequency (fT)300MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)1V@500mA,50mA
Transistor TypeNPN
Operating Temperature-
In Stock:
9917
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.0546 | |
| 10 | 0.0535 | |
| 100 | 0.0519 | |
| 1000 | 0.0502 | |
| 10000 | 0.048 |
Associated Product
