MTB10N40ET4
Part NoMTB10N40ET4
Manufactureronsemi
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)400 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id±20V
Vgs-
Vgs(th)(Max)@Id2.5W (Ta), 125W (Tc)
Vgs(Max)-55°C ~ 150°C (TJ)
InputCapacitance(Ciss)(Max)@VdsSurface Mount
FETFeatureD2PAK
PowerDissipation(Max)TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
OperatingTemperature550mOhm @ 5A, 10V
MountingType63 nC @ 10 V
SupplierDevicePackage2200 pF @ 25 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5151
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.044 | |
| 10 | 1.0231 | |
| 100 | 0.9918 | |
| 1000 | 0.9605 | |
| 10000 | 0.9187 |
Associated Product
