NDD60N550U1-35G

Part NoNDD60N550U1-35G

Manufactureronsemi

DescriptionMOSFET N-CH 600V 8.2A IPAK

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ECAD Module

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Specification

PackageTube

Series-

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)600 V

Current-ContinuousDrain(Id)@25°C8.2A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)550mOhm @ 4A, 10V

RdsOn(Max)@Id4V @ 250µA

Vgs18 nC @ 10 V

Vgs(th)(Max)@Id±25V

Vgs(Max)540 pF @ 50 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature94W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureThrough Hole

MountingTypeI-Pak

SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

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