NTD4809N-35G

NTD4809N-35G

Part NoNTD4809N-35G
Manufactureronsemi
DescriptionMOSFET N-CH 30V 9.6A/58A IPAK
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ECAD Module NTD4809N-35G
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Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C9.6A (Ta), 58A (Tc)
DriveVoltage(MaxRdsOn4.5V, 11.5V
MinRdsOn)9mOhm @ 30A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs13 nC @ 4.5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1456 pF @ 12 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.4W (Ta), 52W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI-Pak
SupplierDevicePackageTO-251-3 Stub Leads, IPak
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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Shipping Information
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