NTD4906N-1G

Part NoNTD4906N-1G

Manufactureronsemi

DescriptionMOSFET N-CH 30V 10.3A/54A IPAK

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ECAD Module

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Specification

PackageTube

Series-

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)30 V

Current-ContinuousDrain(Id)@25°C10.3A (Ta), 54A (Tc)

DriveVoltage(MaxRdsOn4.5V, 10V

MinRdsOn)5.5mOhm @ 30A, 10V

RdsOn(Max)@Id2.2V @ 250µA

Vgs24 nC @ 10 V

Vgs(th)(Max)@Id±20V

Vgs(Max)1932 pF @ 15 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature1.38W (Ta), 37.5W (Tc)

PowerDissipation(Max)-55°C ~ 175°C (TJ)

OperatingTemperatureThrough Hole

MountingTypeI-PAK

SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

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