NTGS1135PT1G
Part NoNTGS1135PT1G
Manufactureronsemi
DescriptionMOSFET P-CH 8V 4.6A 6TSOP
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)8 V
Current-ContinuousDrain(Id)@25°C4.6A (Ta)
DriveVoltage(MaxRdsOn1.2V, 4.5V
MinRdsOn)31mOhm @ 4.6A, 4.5V
RdsOn(Max)@Id850mV @ 250µA
Vgs21 nC @ 4.5 V
Vgs(th)(Max)@Id±6V
Vgs(Max)2200 pF @ 6 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature970mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType6-TSOP
SupplierDevicePackageSOT-23-6 Thin, TSOT-23-6
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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Associated Product
