NTH4L020N120SC1
Part NoNTH4L020N120SC1
Manufactureronsemi
DescriptionSICFET N-CH 1200V 102A TO247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C102A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)28mOhm @ 60A, 20V
RdsOn(Max)@Id4.3V @ 20mA
Vgs220 nC @ 20 V
Vgs(th)(Max)@Id+25V, -15V
Vgs(Max)2943 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature510W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-247-4L
GateCharge(Qg)(Max)@VgsTO-247-4
Grade
Qualification
In Stock:
5466
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 41.7837 | |
| 10 | 40.948 | |
| 100 | 39.6945 | |
| 1000 | 38.441 | |
| 10000 | 36.7697 |
Associated Product
