NTH4L060N090SC1
Part NoNTH4L060N090SC1
Manufactureronsemi
DescriptionSILICON CARBIDE MOSFET, NCHANNEL
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)900 V
Current-ContinuousDrain(Id)@25°C46A (Tc)
DriveVoltage(MaxRdsOn15V, 18V
MinRdsOn)43mOhm @ 20A, 18V
RdsOn(Max)@Id4.3V @ 5mA
Vgs87 nC @ 15 V
Vgs(th)(Max)@Id+22V, -8V
Vgs(Max)1770 pF @ 450 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature221W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-247-4L
GateCharge(Qg)(Max)@VgsTO-247-4
Grade
Qualification
In Stock:
7639
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 14.2394 | |
| 10 | 13.9546 | |
| 100 | 13.5274 | |
| 1000 | 13.1002 | |
| 10000 | 12.5307 |
Associated Product
