NVBG030N120M3S

Part NoNVBG030N120M3S

Manufactureronsemi

DescriptionSILICON CARBIDE (SIC) MOSFET - E

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ECAD Module

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Specification

PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®

SeriesAutomotive, AEC-Q101

ProductStatusActive

FETTypeN-Channel

TechnologySiC (Silicon Carbide Junction Transistor)

DraintoSourceVoltage(Vdss)1200 V

Current-ContinuousDrain(Id)@25°C77A (Tc)

DriveVoltage(MaxRdsOn18V

MinRdsOn)39mOhm @ 30A, 18V

RdsOn(Max)@Id4.4V @ 15mA

Vgs107 nC @ 18 V

Vgs(th)(Max)@Id2430 pF @ 800 V

Vgs(Max)-

InputCapacitance(Ciss)(Max)@Vds348W (Tc)

FETFeature-55°C ~ 175°C (TJ)

PowerDissipation(Max)-

OperatingTemperature-

MountingTypeSurface Mount

SupplierDevicePackageD2PAK-7

Package/CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA

GateCharge(Qg)(Max)@Vgs+22V, -10V

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