NXH003P120M3F2PTNG
Part NoNXH003P120M3F2PTNG
Manufactureronsemi
DescriptionSILICON CARBIDE (SIC) MODULE EL
Datasheet
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ECAD Module
Specification
PackageTray
Series-
ProductStatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Half Bridge)
FETFeatureSilicon Carbide (SiC)
DraintoSourceVoltage(Vdss)1200V
Current-ContinuousDrain(Id)@25°C435A (Tj)
RdsOn(Max)@Id5mOhm @ 200A, 18V
Vgs4.4V @ 160mA
Vgs(th)(Max)@Id1200nC @ 20V
GateCharge(Qg)(Max)@Vgs20889pF @ 800V
InputCapacitance(Ciss)(Max)@Vds1.48kW (Tj)
Power-Max-40°C ~ 150°C (TJ)
OperatingTemperatureModule
MountingType36-PIM (56.7x62.8)
Package/CaseChassis Mount
SupplierDevicePackage-
Grade-
Qualification
In Stock:
13587
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 226.6618 | |
| 10 | 222.1286 | |
| 100 | 215.3287 | |
| 1000 | 208.5289 | |
| 10000 | 199.4624 |
Associated Product
