FQB25N33TM
Part NoFQB25N33TM
ManufacturerON Semiconductor
DescriptionMOSFET N-CH 330V 25A D2PAK
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD²PAK (TO-263AB)
SeriesQFET®
Rds On (Max) @ Id, Vgs230 mOhm @ 12.5A, 10V
Power Dissipation (Max)3.1W (Ta), 250W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other NamesFQB25N33TMTR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds2010pF @ 25V
Gate Charge (Qg) (Max) @ Vgs75nC @ 15V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)330V
Detailed DescriptionN-Channel 330V 25A (Tc) 3.1W (Ta), 250W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C25A (Tc)
In Stock:
16145
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.41 | |
| 10 | 1.3818 | |
| 100 | 1.3395 | |
| 1000 | 1.2972 | |
| 10000 | 1.2408 |
Associated Product
IPB03N03LAG
INFINEON
Power Field-Effect Transistor, 80A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
Power Field-Effect Transistor, 80A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
