SIHB33N60ET1-GE3
Part NoSIHB33N60ET1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 600V 33A TO263
Datasheet
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ECAD Module
Specification
RoHSCompliant
Weight1.437803 g
Number of Channels1
Max Power Dissipation278 W
Drain to Source Resistance98 mΩ
Continuous Drain Current (ID)33 A
Drain to Source Voltage (Vdss)600 V
In Stock:
16042
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.8114 | |
| 10 | 4.7152 | |
| 100 | 4.5708 | |
| 1000 | 4.4265 | |
| 10000 | 4.234 |
Associated Product
