EPC2010
Part NoEPC2010
ManufacturerEPC
DescriptionGANFET N-CH 200V 12A DIE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SerieseGaN®
ProductStatusDiscontinued at Digi-Key
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C12A (Ta)
DriveVoltage(MaxRdsOn5V
MinRdsOn)25mOhm @ 6A, 5V
RdsOn(Max)@Id2.5V @ 3mA
Vgs7.5 nC @ 5 V
Vgs(th)(Max)@Id+6V, -4V
Vgs(Max)540 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-40°C ~ 125°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeDie
SupplierDevicePackageDie
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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available for immediate sale in a store
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Associated Product
