TW060Z120C,S1F
Part NoTW060Z120C,S1F
ManufacturerTOSHIBA
DescriptionG3 1200V SIC-MOSFET TO-247-4L 6
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C36A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)82mOhm @ 18A, 18V
RdsOn(Max)@Id5V @ 4.2mA
Vgs46 nC @ 18 V
Vgs(th)(Max)@Id1530 pF @ 800 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds170W (Tc)
FETFeature175°C
PowerDissipation(Max)-
OperatingTemperature-
MountingTypeThrough Hole
SupplierDevicePackageTO-247-4L(X)
Package/CaseTO-247-4
GateCharge(Qg)(Max)@Vgs+25V, -10V
Grade
Qualification
In Stock:
13083
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 19.7802 | |
| 10 | 19.3846 | |
| 100 | 18.7912 | |
| 1000 | 18.1978 | |
| 10000 | 17.4066 |
Associated Product
