FQAF16N50
Part NoFQAF16N50
ManufacturerFairchild Semiconductor
DescriptionPOWER FIELD-EFFECT TRANSISTOR, 1
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesQFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C11.3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)320mOhm @ 5.65A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs75 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)3000 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature110W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-3PF
GateCharge(Qg)(Max)@VgsTO-3P-3 Full Pack
Grade
Qualification
In Stock:
15076
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.511 | |
| 10 | 2.4608 | |
| 100 | 2.3855 | |
| 1000 | 2.3101 | |
| 10000 | 2.2097 |
Associated Product
