FQI11P06TU
Part NoFQI11P06TU
ManufacturerFairchild Semiconductor
DescriptionMOSFET P-CH 60V 11.4A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesQFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C11.4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)175mOhm @ 5.7A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs17 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)550 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.13W (Ta), 53W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-262 (I2PAK)
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7404
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4756 | |
| 10 | 0.4661 | |
| 100 | 0.4518 | |
| 1000 | 0.4376 | |
| 10000 | 0.4185 |
Associated Product
