IRFR210BTM
Part NoIRFR210BTM
ManufacturerFairchild Semiconductor
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C2.7A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.5Ohm @ 1.35A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs9.3 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)225 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Ta), 26W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-252 (DPAK)
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5427
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.2376 | |
| 10 | 0.2328 | |
| 100 | 0.2257 | |
| 1000 | 0.2186 | |
| 10000 | 0.2091 |
Associated Product
