SCT1000N170
Part NoSCT1000N170
ManufacturerSTMicroelectronics
DescriptionHIP247 IN LINE
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1700 V
Current-ContinuousDrain(Id)@25°C7A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)1.3Ohm @ 3A, 20V
RdsOn(Max)@Id3.5V @ 1mA
Vgs13.3 nC @ 20 V
Vgs(th)(Max)@Id+22V, -10V
Vgs(Max)133 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature96W (Tc)
PowerDissipation(Max)-55°C ~ 200°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeHiP247™
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
14680
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 10.6782 | |
| 10 | 10.4646 | |
| 100 | 10.1443 | |
| 1000 | 9.8239 | |
| 10000 | 9.3968 |
Associated Product
