GPIHV10DK
Part NoGPIHV10DK
ManufacturerGaNPower
DescriptionGaNFET N-CH 1200V 10A TO252
Datasheet
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Specification
PackageTape & Reel (TR)
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C10A
DriveVoltage(MaxRdsOn6V
MinRdsOn)-
RdsOn(Max)@Id1.7V @ 3.5mA
Vgs3.5 nC @ 6 V
Vgs(th)(Max)@Id+7.5V, -12V
Vgs(Max)105 pF @ 700 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType-
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7612
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 6.825 | |
10 | 6.6885 | |
100 | 6.4837 | |
1000 | 6.279 | |
10000 | 6.006 |