IRF830LPBF
Part NoIRF830LPBF
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 500V 4.5A TO262-3
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C4.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.5Ohm @ 2.7A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs38 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)610 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.1W (Ta), 74W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-262-3
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5787
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.2317 | |
| 10 | 1.2071 | |
| 100 | 1.1701 | |
| 1000 | 1.1332 | |
| 10000 | 1.0839 |
Associated Product
