G3S06506C
Part NoG3S06506C
ManufacturerGlobal Power Technology-GPT
DescriptionDIODE SIL CARB 650V 22.5A TO252
Datasheet
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ECAD Module
Specification
PackageCut Tape (CT),Tape & Box (TB)
Series-
ProductStatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
Current-AverageRectified(Io)22.5A
Voltage-Forward(Vf)(Max)@If1.7 V @ 6 A
SpeedNo Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr)50 µA @ 650 V
Current-ReverseLeakage@Vr424pF @ 0V, 1MHz
Capacitance@VrSurface Mount
FTO-252-3, DPak (2 Leads + Tab), SC-63
MountingTypeTO-252
Package/Case-55°C ~ 175°C
SupplierDevicePackage0 ns
OperatingTemperature-Junction-
Grade-
Qualification
In Stock:
3257
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.0698 | |
| 10 | 3.9884 | |
| 100 | 3.8663 | |
| 1000 | 3.7442 | |
| 10000 | 3.5814 |
Associated Product
