TRS8V65H,LQ
Part NoTRS8V65H,LQ
ManufacturerTOSHIBA
DescriptionG3 SIC-SBD 650V 8A DFN8X8
Datasheet
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
Current-AverageRectified(Io)8A
Voltage-Forward(Vf)(Max)@If1.35 V @ 8 A
SpeedNo Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr)90 µA @ 650 V
Current-ReverseLeakage@Vr520pF @ 1V, 1MHz
Capacitance@VrSurface Mount
F4-VSFN Exposed Pad
MountingType4-DFN-EP (8x8)
Package/Case175°C
SupplierDevicePackage0 ns
OperatingTemperature-Junction-
Grade-
Qualification
In Stock:
5488
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 3.047 | |
10 | 2.9861 | |
100 | 2.8946 | |
1000 | 2.8032 | |
10000 | 2.6814 |