G2K2P10D3E
Part NoG2K2P10D3E
ManufacturerGoford Semiconductor
DescriptionMOSFET P-CH ESD 100V 10A DFN3*3-
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)210mOhm @ 6A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs33 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1668 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature31W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-DFN (3.15x3.05)
SupplierDevicePackage8-PowerVDFN
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
24951
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.1666 | |
| 10 | 0.1633 | |
| 100 | 0.1583 | |
| 1000 | 0.1533 | |
| 10000 | 0.1466 |
Associated Product
