SI2301AHE3-TP
Part NoSI2301AHE3-TP
ManufacturerMicro Commercial
DescriptionInterface
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C3.4A (Ta)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)51mOhm @ 3.4A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs5.41 nC @ 10 V
Vgs(th)(Max)@Id±10V
Vgs(Max)438 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W
PowerDissipation(Max)-55°C ~ 150°C
OperatingTemperatureSurface Mount
MountingTypeSOT-23
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock:
4427
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.1053 | |
| 10 | 0.1032 | |
| 100 | 0.1 | |
| 1000 | 0.0969 | |
| 10000 | 0.0927 |
Associated Product
