G60N06T
Part NoG60N06T
ManufacturerGoford Semiconductor
DescriptionN60V, 50A,RD<17M@10V,VTH1.0V~2.0
Datasheet
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ECAD Module
Specification
PackageTube
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C50A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)17mOhm @ 5A, 10V
RdsOn(Max)@Id2V @ 250µA
Vgs50 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2050 pF @ 30 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature85W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
23915
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.3105 | |
| 10 | 0.3043 | |
| 100 | 0.295 | |
| 1000 | 0.2857 | |
| 10000 | 0.2732 |
Associated Product
