SISH892BDN-T1-GE3
Part NoSISH892BDN-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 100 V (D-S) MOSFET POW
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C6.8A (Ta), 20A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)2.4V @ 250µA
RdsOn(Max)@Id±20V
Vgs-
Vgs(th)(Max)@Id3.4W (Ta), 29W (Tc)
Vgs(Max)-55°C ~ 150°C (TJ)
InputCapacitance(Ciss)(Max)@VdsSurface Mount
FETFeaturePowerPAK® SO-8DC
PowerDissipation(Max)PowerPAK® SO-8
OperatingTemperature30.4mOhm @ 10A, 10V
MountingType26.5 nC @ 10 V
SupplierDevicePackage1110 pF @ 50 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3509
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7565 | |
| 10 | 0.7414 | |
| 100 | 0.7187 | |
| 1000 | 0.696 | |
| 10000 | 0.6657 |
Associated Product
