G60N10K
Part NoG60N10K
ManufacturerGoford Semiconductor
DescriptionN90V,60A,RD<25M@10V,VTH0.8V~2.5V
Datasheet
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)90 V
Current-ContinuousDrain(Id)@25°C60A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)25mOhm @ 20A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs111 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4118 pF @ 50 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature56W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-252
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5115
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.2988 | |
10 | 0.2928 | |
100 | 0.2839 | |
1000 | 0.2749 | |
10000 | 0.2629 |