IXTH1N200P3
Part NoIXTH1N200P3
ManufacturerIXYS
DescriptionMOSFET N-CH 2000V 1A TO247
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
SeriesPolar P3™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)2000 V
Current-ContinuousDrain(Id)@25°C1A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)40Ohm @ 500mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs23.5 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)646 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247 (IXTH)
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4146
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 8.5749 | |
| 10 | 8.4034 | |
| 100 | 8.1462 | |
| 1000 | 7.8889 | |
| 10000 | 7.5459 |
Associated Product
