GT023N10M
Part NoGT023N10M
ManufacturerGoford Semiconductor
DescriptionN100V,140A,RD<2.7M@10V,VTH2.7V~4
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C140A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.7mOhm @ 20A, 10V
RdsOn(Max)@Id4.3V @ 250µA
Vgs90 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)8050 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature500W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8557
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.596 | |
| 10 | 1.5641 | |
| 100 | 1.5162 | |
| 1000 | 1.4683 | |
| 10000 | 1.4045 |
Associated Product
